Publication Date:
2012-06-05
Description:
Author(s): Michael A. Reshchikov We observed tunable two-step thermal quenching of photoluminescence in high-resistivity Zn-doped GaN. The characteristic temperatures of the first and second steps increase with increasing excitation intensity. The effect is explained within a phenomenological model involving shallow donors, nonradi... [Phys. Rev. B 85, 245203] Published Mon Jun 04, 2012
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics