Publikationsdatum:
2019
Beschreibung:
〈p〉Publication date: 15 March 2019〈/p〉
〈p〉〈b〉Source:〈/b〉 Materials Letters, Volume 239〈/p〉
〈p〉Author(s): Zhikuo Tao, Shiqi Liu, Henan Fang, Lin Chen, Jiangwei Chen, Xiangqian Xiu, Rong Zhang〈/p〉
〈div xml:lang="en"〉
〈h5〉Abstract〈/h5〉
〈div〉〈p〉Magnetic and transport properties of iron nitride compounds are closely related to the ratio of Fe:N. In this letter, we report a successful growth of pure single-phase N-rich iron nitride (〈em〉ε〈/em〉-Fe〈sub〉2–3〈/sub〉N and 〈em〉γ〈/em〉″-FeN) films on Al〈sub〉2〈/sub〉O〈sub〉3〈/sub〉. 〈em〉ε〈/em〉-Fe〈sub〉2–3〈/sub〉N shows a ferromagnetic behavior while 〈em〉γ〈/em〉″-FeN shows a nonmagnetic behavior. Same with other N-poor iron nitrides, 〈em〉ε〈/em〉-Fe〈sub〉2–3〈/sub〉N presents metallic transport nature. In particular, weak localization in quantum interference effects (QIEs) and spin-dependent scattering phenomena are observed in 〈em〉ε〈/em〉-Fe〈sub〉2–3〈/sub〉N. Different with other known iron nitrides, 〈em〉γ〈/em〉″-FeN shows semiconductor-like transport property. These findings offer great opportunities for designing magnetoelectronic devices based on iron nitride compounds.〈/p〉〈/div〉
〈/div〉
Print ISSN:
0167-577X
Digitale ISSN:
1873-4979
Thema:
Chemie und Pharmazie
,
Maschinenbau
