Publication Date:
2018
Description:
〈p〉Publication date: 1 February 2019〈/p〉
〈p〉〈b〉Source:〈/b〉 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 440〈/p〉
〈p〉Author(s): Ruibin Li, Chaohui He, Wei Chen, Junlin Li, Chenhui Wang, Guizhen Wang, Chao Qi, Shanchao Yang, Xiaoming Jin, Yan Liu, Xiaoyan Bai〈/p〉
〈div xml:lang="en"〉
〈h5〉Abstract〈/h5〉
〈div〉〈p〉Latch up (LU), an inherent destructive phenomenon owning to P-N-P-N structure in bulk Complementary Metal-Oxide -Silicon (CMOS) circuits, is highly sensitive to pulsed irradiation. A criterion for LU is concluded, and the impact of total ionizing dose (TID) on LU criterion is discussed. In the progress of accumulating TID, generated oxide trapped charges and interface states enhance surface recombination in the base of the parasitic bipolar junction transistor (PBJT), leading to increase of the base recombination current; and the trapped charges in the shallow trench isolation (STI) can also increase leakage current. In spite of hindering effect of the base recombination in PBJTs to LU, the STI leakage current plays a dominant role to gain sensitivity of LU. Experimental results confirm the fact that TID can lower the dose rate threshold for LU. For instance, the threshold in the device with doses 150 krad(Si) is nearly 50% lower than that in the pristine device. Simulations in SPICE and Sentaurus are conducted, and the results agree with that of experiments.〈/p〉〈/div〉
〈/div〉
Print ISSN:
0168-583X
Electronic ISSN:
1872-9584
Topics:
Physics
