Publikationsdatum:
2012-03-31
Beschreibung:
Author(s): T. M. Lu, W. Pan, D. C. Tsui, C.-H. Lee, and C. W. Liu The fractional quantum Hall (FQH) regime of the Si two-dimensional electron system (2DES) in enhancement-mode field-effect transistors of Si/SiGe heterostructures was probed via electrical transport measurements. At n ∼2.6×10 11 cm 2 with μ =1.6×10 6 cm 2 /V s , signatures of FQH states at filling factors ν ... [Phys. Rev. B 85, 121307] Published Fri Mar 30, 2012
Schlagwort(e):
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik