Publication Date:
2011-07-06
Description:
Author(s): G. G. Scapellato, S. Boninelli, E. Napolitani, E. Bruno, A. J. Smith, S. Mirabella, M. Mastromatteo, D. De Salvador, R. Gwilliam, C. Spinella, A. Carnera, and F. Priolo The effect of O implantation in crystalline Ge on the density of native point defects has been investigated through transmission electron microscopy and B diffusion experiments. Annealing at 650 °C following O implants produces a band of defects (∼5–10 nm), compatible with GeO 2 nanoclusters (NCs). A... [Phys. Rev. B 84, 024104] Published Tue Jul 05, 2011
Keywords:
Structure, structural phase transitions, mechanical properties, defects
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics