Publication Date:
2019-07-13
Description:
This paper presents two-photon absorption test results on an engineering single-event burnout- (SEB-) sensitive power MOSFET to verify that the energy deposition/charge ionization in the highly-doped substrate does not contribute to SEB. It is shown that for a vertical power MOSFET, the SEB sensitive volume is the lightly doped epitaxial layer; the most sensitive region is under the polysllicon gate.
Keywords:
Electronics and Electrical Engineering
Type:
NSREC 2011 - PB2
,
LEGNEW-OLDGSFC-GSFC-LN-1239
,
Annual IEEE Nuclear and Space Radiation Effects Conference (NSREC) 2011; Jul 25, 2011 - Jul 29, 2011; Las Vegas, NV; United States
Format:
application/pdf