Publication Date:
2019-07-13
Description:
Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype IC's with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3- and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient. Improved reproducibility remains to be accomplished.
Keywords:
Electronics and Electrical Engineering
Type:
GRC-E-DAA-TN26971
,
International Conference on Silicon Carbide and Related Materials; Oct 04, 2015 - Oct 09, 2015; Sicily; Italy
Format:
application/pdf