Publication Date:
2019-07-13
Description:
Raman spectroscopy is used to measure the junction temperature of a Cree SiC MESFET as a function of the ambient temperature and DC power. The carrier temperature, which is approximately equal to the ambient temperature, is varied from 25 C to 450 C, and the transistor is biased with VDS=10V and IDS of 50 mA and 100 mA. It is shown that the junction temperature is approximately 52 and 100 C higher than the ambient temperature for the DC power of 500 and 1000 mW, respectively.
Keywords:
Electronics and Electrical Engineering
Type:
E-17168-P
,
2009 International Microwable Symposium; Jun 07, 2009 - Jun 12, 2009; Boston, MA; United States
Format:
application/pdf