Publication Date:
2019-07-13
Description:
In this paper, novel low loss, wide-band coplanar stripline technology for radio frequency (RF)/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth, and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semi-conductor devices and microelectromechanical systems (MEMS).
Keywords:
Electronics and Electrical Engineering
Type:
NASA/CR-2001-209679
,
E-12024-2
,
NAS 1.26:209679
,
2001 Topical Meeting on Silicon Momolithic Integrated Circuits in RF Systems; Sep 12, 2001 - Sep 14, 2001; Ann Arbor, MI; United States
Format:
application/pdf
