Publication Date:
2019-07-13
Description:
Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(sub max)F(sub T) consistently shows an increase of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration.
Keywords:
Solid-State Physics
Type:
NASA-TM-112704
,
NAS 1.15:112704
,
IEEE-92-12312
,
E-7324
,
IEEE Transactions on Electron Devices (ISSN 0018-9383); 40; 11; 1905-1909
Format:
text
