Publication Date:
2019-07-13
Description:
Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.
Keywords:
ELECTRONICS AND ELECTRICAL ENGINEERING
Type:
NASA-TM-106761
,
E-9201
,
NAS 1.15:106761
,
Spring Meeting; Apr 12, 1993 - Apr 16, 1993; San Francsico, CA; United States
Format:
application/pdf