Publication Date:
2019-07-13
Description:
The metallurgical and electrical behavior of Au/Zn contacting metallization on p-type InP was investigated as a function of the Zn content in the metallization. It was found that ohmic behavior can be achieved with Zn concentrations as small as 0.05 atomic percent Zn. For Zn concentrations between 0.1 and 36 at. percent, the contact resistivity rho(sub c) was found to be independent of the Zn content. For low Zn concentrations the realization of ohmic behavior was found to require the growth of the compound Au2P3 at the metal-InP interface. The magnitude of rho(sub c) is shown to be very sensitive to the growth rate of the interfacial Au2P3 layer. The possibility of exploiting this sensitivity to provide low resistance contacts while avoiding the semiconductor structural damage that is normally attendant to contact formation is discussed.
Keywords:
ENERGY PRODUCTION AND CONVERSION
Type:
NASA-TM-106590
,
E-8857
,
NAS 1.15:106590
,
MRS Spring Meeting; Apr 04, 1994 - Apr 08, 1994; San Francisco, CA; United States
Format:
application/pdf
