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  • 1
    facet.materialart.
    Unknown
    In:  CASI
    Publication Date: 2019-06-28
    Description: The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Format: application/pdf
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