Publication Date:
2019-06-28
Description:
The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.
Keywords:
ENERGY PRODUCTION AND CONVERSION
Format:
application/pdf