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    GaAs single-drift flat-profile IMPATT diodes for CW operation at D band (1992)
    In:  Other Sources
    Details
    Publication Date: 2019-08-14
    Description: Single-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140 GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks, and tested in a radial line full height waveguide cavity. An RF output power of 15 mW with a corresponding DC to RF conversion efficiency of 1.5 percent was obtained at 135.3 GHz.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Electronics Letters (ISSN 0013-5194); 28; 23; p. 2176, 2177.
    Format: text
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