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Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long-wavelength infrared detectors (1990)

Lin, T. L. ; Maserjian, J.

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Publication Date: 2011-08-19

Description: The feasibility of a novel p(+)-Si(1-x)Ge(x)-p-Si heterojunction internal photoemission (HIP) IR detector is demonstrated. A degenerately doped p(x)-Si(1-x)Ge(x) layer is required for strong IR absorption to generate photoexcited holes. The Si(1-x)Ge(x) layers are grown by molecular beam epitaxy, with boron concentrations up to 10 to the 20th/cu cm achieved by using an HBO2 source. Photoresponse at wavelengths ranging from 2 to 10 microns has been obtained with quantum efficiencies above 1 percent. The tailorable cutoff wavelength of the HIP detector has been demonstrated by varying the Ge composition ratio in the Si(1-x)Ge(x) layers.

Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING

Type: Applied Physics Letters (ISSN 0003-6951); 57; 1422-142

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