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Effect of Ga and P dopants on the thermoelectric properties of n-type SiGe (1989)

Vandersande, J. W. ; Masters, R. ; Wood, C. ; [et al.]

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Publication Date: 2019-07-13

Description: The purpose of this study was to hot-press improved n-type Si80Ge20/GaP samples directly (without any heat treatment) and to confirm that a Ga/P ratio less than one increases the solubility of P and, hence, improves the power factor and Z. One of the three samples (Ga/P = 0.43) had an improvement in Z of about 20 percent between 400 and 1000 C over that for standard SiGe. This demonstrates that improved samples can be pressed directly and that a Ga/P ratio less than one is necessary. The other two samples (Ga/P = 0.33 and 0.50) had Z's equal to or less than that of standard SiGe but had a lower hot-pressing temperature than the improved sample.

Keywords: SOLID-STATE PHYSICS

Type: IECEC-89; Aug 06, 1989 - Aug 11, 1989; Washington, DC; United States

Format: text

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