Publication Date:
2019-07-12
Description:
The optical properties of lattice-matched GaAs/Al(x)Ga(1-x)As and In(y)Ga(1-y)As/GaAs strained-layer superlattices grown on Si substrates have been studied using the photoreflectance technique. These preliminary results show that good quality III-IV epilayers can be grown on Si. The experimental data were compared with calculations based on the envelope-function approximation and fitted to the third-derivative functional form of reflectance modulation theory.
Keywords:
SOLID-STATE PHYSICS
Type:
Applied Physics Letters (ISSN 0003-6951); 50; 1748-175
Format:
text