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  • 1
    facet.materialart.
    Unknown
    In:  CASI
    Publication Date: 2019-06-28
    Description: A front surface contact floating emitter solar cell transistor is provided in a semiconductor body (n-type), in which floating emitter sections (p-type) are diffused or implanted in the front surface. Between the emitter sections, a further section is diffused or implanted in the front surface, but isolated from the floating emitter sections, for use either as a base contact to the n-type semiconductor body, in which case the section is doped n+, or as a collector for the adjacent emitter sections.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Format: application/pdf
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