Publication Date:
2019-07-13
Description:
Optical properties of three types of insulating films that show promise in potential applications in the 3-4 semiconductor technology were evaluated, namely a-C:H, BN and CaF2. The plasma deposited a-C:H shows an amorphous behavior with optical energy gaps of approximately 2 to 2.4 eV. These a-C:H films have higher density and/or hardness, higher refractive index and lower optical energy gaps with increasing energy of the particles in the plasma, while the density of states remains unchanged. These results are in agreement, and give a fine-tuned positive confirmation to an existing conjecture on the nature of a-C:H films (1). Ion beam deposited BN films show amorphous behavior with energy gap of 5 eV. These films are nonstoichiometric (B/N approximately 2) and have refractive index, density and/or hardness which are dependent on the deposition conditions. The epitaxially grown CaF2 on GaAs films have optical parameters equal to bulk, but evidence of damage was found in the GaAs at the interface.
Keywords:
SOLID-STATE PHYSICS
Type:
NASA-TM-87135
,
E-2750
,
NAS 1.15:87135
,
Meeting of the Electrochem. Soc.; Oct 13, 1985 - Oct 18, 1985; Las Vegas, NV; United States
Format:
application/pdf
