Publication Date:
2011-08-19
Description:
The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.
Keywords:
ELECTRONICS AND ELECTRICAL ENGINEERING
Type:
IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-31; 1461-146
Format:
text