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Substrate orientation dependence of enhanced epitaxial regrowth of silicon (1984)

Nicolet, M.-A. ; Ho, K. T. ; Suni, I.

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Publication Date: 2011-08-18

Description: This work extends the study of dopant-enhanced epitaxial regrowth rate of amorphized Si from the 100 to the 110 and 111 line orientations of Si. Boron and phosphorus dopants are considered. The annealing temperatures are 500 and 550 C. Phosphorus enhances the growth rates in all three orientations by a constant factor of 8.1 + or - 0.9. Boron produces a higher enhancement factor of 12.2 + or - 1.2, except in the case of 100. Implications of the results on various growth models are considered. The crystalline quality of regrown 111 layers is improved in the doped samples.

Keywords: SOLID-STATE PHYSICS

Type: Journal of Applied Physics (ISSN 0021-8979); 56; 1207-121

Format: text

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