Publication Date:
2011-08-18
Description:
A three stage IMPATT diode amplifier capable of a 16 W CW output and a 2 dB bandwidth of 117 MHz was developed. On the component side, high performance circulators with a 0.2 dB insertion loss and bandwidth of 5 GHz were fabricated. State of the art GaAs IMPATT diodes incorporating diamond heat sink and double Read doping profile were also developed. The diodes are capable of a 2.5 W CW output. A few diodes achieved power outputs as high as 3 W. On the circuit side, high gain (up to 12 dB per stage) single diode, multituned circuits capable of 2 GHz and 930 MHx bandwidth were developed as the first and second stages, respectively, of the amplifier. A 12 diode waveguide cavity combiner was developed as the output stage. The output stage utilized commercially available single drift GaAs IMPATT diodes.
Keywords:
ELECTRONICS AND ELECTRICAL ENGINEERING
Type:
A 20-GHz IMPATT Tansmitter 1; 126 p
Format:
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