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Electrical characteristics of amorphous iron-tungsten contacts on silicon (1983)

Pan, E. T.-S. ; Suni, I. ; Finetti, M. ; [et al.]

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Publication Date: 2011-08-18

Description: The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities of 1 x 10 to the -7th and 2.8 x 10 to the -6th were measured on n(+) and p(+) silicon, respectively. These values remain constant after thermal treatment up to at least 500 C. A barrier height of 0.61 V was measured on n-type silicon.

Keywords: SOLID-STATE PHYSICS

Type: Applied Physics Letters (ISSN 0003-6951); 42; June 1

Format: text

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