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Silicon crystal growth in vacuum (1982)

Schmid, F. ; Khattak, C. P.

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Publication Date: 2011-08-18

Description: The most developed process for silicon crystal growth is the Czochralski (CZ) method which was in production for over two decades. In an effort to reduce cost of single crystal silicon for photovoltaic applications, a directional solidification technique, Heat Exchanger Method (HEM), was adapted. Materials used in HEM and CZ furnaces are quite similar (heaters, crucibles, insulation, etc.). To eliminate the cost of high purity argon, it was intended to use vacuum operation in HEM. Two of the major problems encountered in vacuum processing of silicon are crucible decomposition and silicon carbide formation in the melt.

Keywords: ENERGY PRODUCTION AND CONVERSION

Type: Silicon Ingot Casting, Phase 3 and Phase 4; 4 p

Format: text

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