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An advanced, radiation hardened bulk CMOS/LSI technology (1981)

Gingerich, B. L. ; Lichtel, R. L. ; Schroeder, J. E.

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Publication Date: 2011-08-18

Description: An advanced, second generation, bulk, Si-gate CMOS process is described. This process is capable of producing LSI and VLSI parts that are latch-up free and hardened to total dose levels in excess of 2 x 10 to the 5th rad-Si for applications in space and weapons radiation environments. Two memories designed to use this process are also described. Both circuits are 4096-bit, static CMOS RAMs.

Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING

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