ISSN:
1551-2916
Source:
Blackwell Publishing Journal Backfiles 1879-2005
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
The effect of oxide crystallinity on the oxidation rate of silicon carbide was investigated. CVD SiC coupons were oxidized in a clean TGA reactor system at 1300°C initially in flowing oxygen, immediately annealed in argon, and then reoxidized, all in situ and without cooling (so as to preserve oxide integrity). The parabolic rate constants determined for the preoxidation regime (of mainly amorphous oxide film) and reoxidation regime (of devitrified oxide) were compared. The oxidation rate decreased by a factor of }30 following full oxide crystallization induced by the anneal.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1111/j.1151-2916.1997.tb03014.x
