ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Ceramic Society 80 (1997), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Thin, semiconducting barium titanate (BaTiO3) ceramic bars, with a diameter of 10 to 20 μm, consisting of single grains joined together in series have been prepared to investigate the piezoresistivity in the materials, which was evaluated from their current (I)-voltage (V) characteristics under the loading condition of various bending stresses. I-V characteristics of single grain boundaries in some of the materials were found to exhibit distinct differential negative resistance (DNR) at room temperature with its feature changing with stress. The DNR appeared on the I-V curves at an electric field of several volts per one grain, and has been confirmed to be connected with the transition of current between two conduction states in the grain boundary region. The obtained results indicate that this phenomenon cannot be interpreted by a rise in the temperature of the materials up to their positive temperature coefficient of resistivity (PTCR) region above the Curie point by Joule heating due to current flow, that is their self-heating effect. This newly observed DNR phenomenon has thus been tentatively interpreted by the morphological change in the ferroelectric domain structure in the vicinity of grain boundaries under mechanical and electric stresses, on an assumption that different configurations of ferroelectric domains yield different conduction states in the grain boundary due to a difference in the degree of surface acceptor charge compensation or the anisotropic carrier mobilities in the crystal.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...