ISSN:
1551-2916
Source:
Blackwell Publishing Journal Backfiles 1879-2005
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Flexural creep behavior is reported for an in situ-toughened SiC between 1100° and 1500°C in four-point bending. The flexural creep rate of this SiC, sintered with aluminum, boron, and carbon (ABC-SiC), exhibits linear stress dependence, low apparent activation energy, and low incidence of cavitation and dislocation production. Most grain boundaries in this ceramic contain 1–5 nm intergranular films. The creep rate is consistent with a grain-boundary transport mechanism involving diffusion along the grain-boundary film-SiC interfaces. The microstructure and grain boundaries have been examined using transmission electron microscopy to assess possible changes during creep, particularly in relation to the applied stress direction.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1111/j.1151-2916.2001.tb00952.x
