ISSN:
1662-0356
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Natural Sciences in General
,
Technology
Notes:
In this study, the dipole switching and non-volatile memory functionality ofpoly(vinylidene fluoride-trifluoroethylene) (PVDF/TrFE)(72/28 mol%) random copolymer ultrathinfilms were analyzed. PVDF/TrFE(72/28) used as ferroelectric insulator in varying memory devicearchitectures such as metal-ferroelectric polymer-metal (MFM), MF-insulator-semiconductor(MFIS), MIS and ferroelectric field-effect transistors (FeFET) were examined using differentelectrical measurements. A maximum data writing speed of 1.69 MHz was calculated from theswitching time measured using MFM architecture. Compared to MFM, MFIS device architecture wasfound to be more suitable for distinguishing the ‘0’ and ‘1’ state using the capacitance-voltagemeasurement. With FeFET, the measured drain current (Id) as well as its memory window increasedwith decreasing channel length, thereby enabling the easier identification of ‘0’ and ‘1’ statecomparable to the MFIS case. The data obtained from this study will be useful in the fabrication ofnon-volatile random access memory (NVRAM) devices operating at lower voltage with faster dataR/W/E speed and memory retention capability
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.54.491.pdf
