ISSN:
1662-0356
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Natural Sciences in General
,
Technology
Notes:
There is a current upsurge in research on devices with nanoparticles embedded indielectrics. Such structures can operate as memories with high speed, high density, low voltage andlow cost. Here, we report on hybrid gold nanoparticle-based metal-insulator-semiconductor (MIS)memory devices combining silicon technology and organic thin film deposition. The nanoparticlesare deposited using a self-assembly technique at room temperature onto a 4.5 nm thermal siliconoxide layer. A 40 nm thin film of pentacene (deposited by flash thermal evaporation),polymethylmethacrylate (spin coated) and cadmium arachidate (deposited using the Langmuir-Blodgett technique) are used as insulators. Distinct capacitance-voltage (C-V) hysteresis is observedwith a memory window that increases linearly with increasing voltage programming range.Clockwise and anticlockwise hysteresis in devices based on p-type and n-type silicon, respectivelyare observed, indicating that charges are injected from the top electrode to the nanoparticles ratherthan tunnelling through the thin SiO2 layer. However, thermal growth of SiO2 at a temperaturebelow 800 °C resulted in a hysteresis in the opposite direction. The detailed electrical behaviour ofthe MIS devices will be discussed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.54.474.pdf
