Digitale Medien
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 124-126 (June 2007), p. 49-52
ISSN:
1662-9779
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Physik
Notizen:
Electroplating of copper in via filling is very important in 3D SiP (System in Packaging).Defect free via filling can be obtained through additive in the electrolyte and current type control. Viain Si wafer were formed by RIE method with 170 &m depth and 50 &m in diameter. Seed layers weredeposited by ionized metal plasma (IMP) sputtering; Ta for diffusion barrier, Cu for conductive layer.Via was filled with copper by electroplating method. Different types of additives were used in viafilling; PEG, SPS, Cl- and JGB. Defects in via were controlled and eliminated by precise monitoringof additive concentration and input current. The optimum condition of electroplating was determinedby getting cross-sectional images of filled vias and by determining the degree of via filling
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.49.pdf
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