Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 121-123 (Mar. 2007), p. 797-800
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Nanoscaled silicon cone arrays were formed on mirror-polished silicon wafers by plasmaetching using hot filament chemical vapor deposition (HFCVD) system. A mixture of CH4 and H2was introduced during silicon cone formation. AlN films were coated on Si cone arrays using radiofrequency (RF) magnetron sputtering system. Scanning electrons microscopy (SEM) was employedto characterize the morphology of silicon cone arrays before and after AlN coating. The fieldemission characteristics of AlN coated silicon cone arrays，uncoated silicon cone arrays and AlNfilms were studied and compared, and the silicon cone arrays with AlN coating showed the bestenhanced electron emission properties due to the negative electron affinity of AlN coating layer andthe high aspect ratio of silicon cone. For AlN coated silicon cone arrays, a slight hysteresis betweenthe upward and downward voltage sweeps was also observed and the field emission currents fromAlN coated Si nanocone arrays decreased with the increase of the thickness of AlN films, whichcould be mainly attributed to the space charge buildup in AlN film with wide band gap
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.797.pdf
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