ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Orthorhombic boron nitride film is prepared on Si(100) substrate by radio frequency plasmaenhanced pulse (Nd:YAG) laser deposition (RF-PEPLD) in Ar-N2 gas system, assisted with substratepulse negative bias -150v, substrate temperature of 500ºC and deposition time of 30 minutes. The phasecompositions of the film are characterized by Fourier transform infrared (FTIR) spectroscopy,glancing-angle X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM).The results show that high quality orthorhombic boron nitride film has been prepared. A layer structuregrowth mechanism of orthorhombic boron nitride phase upon RF-PEPLD is discussed in this paper. Athin layer h-BN [101] is deposited before depositing o-BN and h-BN mixed phase, then o-BN percentagecomposition of the BN film becomes creasing
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.929.pdf
