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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 353-358 (Sept. 2007), p. 1999-2002 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: CVD diamond thick film was brazed to cemmented carbide using a Ag-Cu-Ti active fillermetal. The brazing process was performed in a vacuum furnace under different processing condition.The interfacial microstructure and characterization between diamond and Ag-Cu-Ti filler metalwere studied by SEM, EPMA and EDX. The morphology and distribution of new compound areshown for the first time (Figs). Results illustrate that a small amount of new compound TiC, TiCucompound exist in the interface. TiC layer exists in the interface and it's thickness is variationalwith the varying of processing condition such as peak heating temperature, keeping time and so on.New compound TiC accretes with the surface atoms of diamond in a special section, and particularorientation relationships are occasionally observed by examining the fracture section. TiCu layernear TiC exists in the interface. It is worth notice that too much TiC and TiCu in interface couldweaken join strength because TiC and TiCu are brittle
    Type of Medium: Electronic Resource
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