ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this paper, the surface and subsurface of silicon wafers ground by different wheels havebeen studied. In the conventional grinding with diamond wheels, it is shown from the top that thesubsurface of wafer consists of amorphous Si, followed by a thin damaged layer, strained crystal witha large compressive residue stress, and then the bulk material in single crystal. In a severe conditionwhich causes grinding burn, part of amorphous Si is re-crystallized to form a poly-crystal Si, and partof amorphous Si possibly reacts with oxygen to form SiO2. This phenomenon becomes morepronounced in the backgrinding process with a fine grit diamond wheel when the conditions areimproperly selected. In order to obtain a defect-free crystal Si structure in grinding, authors haveproposed a new chemo-mechanical grinding (CMG) process which enables to remove Si from waferbut with no structure transformation induced to its surface
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.329.373.pdf
