Digitale Medien
s.l. ; Stafa-Zurich, Switzerland
Materials science forum
Vol. 556-557 (Sept. 2007), p. 941-944
ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
The detector structures based on Al ion-implanted p+-n junctions in 4H-SiC have beenmanufactured and tested at temperatures up to 170oC by α-particles with energies of 3.9 and 5.5MeV. Structural peculiarities of thin Al high dose ion implanted layers before and after short hightemperature activation annealing were studied by combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Thedetector structures fabricated on this thin ion implanted p+-n junctions operated in the temperaturerange of 16-170 oC with reproducible stable spectrometric characteristics. The charge collectionefficiency and the energy resolution of detectors improved with rising temperature up to 170 oC,that was obtained in SiC detectors for the first time
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.941.pdf
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