ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Homoepitaxial growth of 4H-SiC and characterization of deep levels obtained mainly inthe authors’ group have been reviewed. The growth rate has been increased to 24 om/h with keepingvery good surface morphology and low trap concentration on 8o off-axis 4H-SiC(0001) by hot-wallchemical vapor deposition at 1650oC. The increased growth rate has resulted in the enhancedconversion of basal-plane dislocations into threading edge dislocations in epilayers. The Z1/2 andEH6/7 concentrations can be decreased to about 1·1012 cm-3 by increasing the C/Si ratio during CVD.Extensive investigation on as-grown and electron-irradiated epilayers indicates that both the Z1/2 andEH6/7 centers may be attributed to the same origin related to carbon displacement, probably a carbonvacancy. Deep levels observed in as-grown and irradiated p-type 4H-SiC are also presented
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.35.pdf
