ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Indium Tin Oxide (ITO) films were deposited on nonalkali glass substrate by dcmagnetron sputtering using high density ITO targets with different conductivitis. Depositions werecarried out at total gas pressure (Ptot) of 0.6 Pa, substrate temperature (Ts) of RT, oxygen flow ratio[O2/(O2+Ar)] of 0 ~ 3.0 % and dc power of 100W. High conductivity target showed relatively highstability in electrical property with increasing target erosion ratio. Optimum O2 addition ratio toobtain the lowest resistivity was decreased with increasing target erosion ratio. High conductivityITO target could lead to decrease in micro-nodule formation on the target surface because of highcooling. The decrease in resistivity was observed for the film annealed at H2 introduction or withoutO2 addition in vacuum, where could be attributed to increase in carrier density
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.544-545.833.pdf
