ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We investigated InGaAs layers grown by molecular-beam epitaxy on GaAs (001) withtransmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers withIn-concentrations of 16, 25 and 28 % and respective thicknesses of 20, 22 and 23 monolayers weredeposited at 535 °C. Island formation is observed for the layer with the highest In-concentration. Inconcentrationprofiles were obtained from high-resolution TEM images by composition evaluationby lattice fringe analysis. The measured profiles can well be fitted applying the segregation model ofMuraki et al. [Appl. Phys. Lett. 61 (1992) 557] and are in excellent quantitative agreement with thephotoluminescence peak positions. From our data we conclude that island formation occurs whenthe amount of Indium in the In-floating layer reaches 1.1±0.2 monolayers indium
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/15/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.539-543.3540.pdf
