ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Trenched, vertical SiC static induction transistors (SIT) for L-band power amplificationwere fabricated with implanted p-n junction gates on conducting n-type 4H-SiC substrates using aself-aligned fabrication process. The self-aligned fabrication process required no critical alignmentsand allowed for high channel packing densities ranging from 2.9x103 to 5x103 cm/cm2. Deviceswere fabricated with a range of finger widths. Devices with the narrowest fingers were able to blockup to 450 V with VGS = -3 V. Devices with wider fingers required higher gate voltages rangingfrom -10 V to -25 V to achieve similar blocking. Devices were packaged and small-signal and loadpullmeasurements were taken with the devices externally matched. Devices having the narrowestfinger design had a small-signal power gain of over 9 dB at around 1.3 GHz. Load-pullmeasurements of packaged SITs with 1 cm gate periphery yielded a maximum power gain of ~ 8.2dB at 1 GHz, VDD = 100 V, and VGS = 1.2 V. Due to the high packing density, these results translateto power densities of 22 kW/cm2
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1223.pdf
