ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A method to determine the variation of thermal conductivity as a function of temperature in silicon is described. The method is based on the application of a photothermal displacement technique in the temperature range 30–300 K. The results obtained on samples with different types and dopant concentrations are shown to be in good agreement with those reported in the literature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1143966