ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy applications. This technique can be easily adapted to any ultrahigh vacuum scanning tunneling microscope that has coarse motion and tip ex- change capabilities. A 90° bent diamond tip attached to a tip holder is used to make micron long scratches on GaAs(001) surfaces along a 〈110〉 direction. The sample is then fractured and the cross-sectional surface is scanned in the conventional way. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1146997