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Imaging the atomically resolved dissociation of D2S on Si(100) from 80 to 300 K (1999)

Rezaei, M. A. ; Stipe, B. C. ; Ho, W.

College Park, Md. : American Institute of Physics (AIP)

The Journal of Chemical Physics 110 (1999), S. 3548-3552

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ISSN: 1089-7690

Source: AIP Digital Archive

Topics: Physics , Chemistry and Pharmacology

Notes: Using a variable-temperature, ultrahigh vacuum scanning tunneling microscope (STM), we have induced and imaged and dissociation of D2S on Si(100). D2S dissociates into DS and D below 200 K. Individual DS fragments can be dissociated with the STM at low temperatures. The deuterium atom attaches to a neighboring silicon dimer. At 200 K or above, D2S dissociates into S and two Ds. D2S adsorption affects the surface reconstruction on Si(100), from the buckled dimer configuration to the dynamically flipping configuration and vice versa. We discuss our results in the context of other experiments on the same and similar systems. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.478222

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