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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 6458-6465 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High-resolution electron energy loss spectroscopy (EELS) has been applied to the study of the Si(111)(7×7)–H2O(D2O) system. At 300 K, H2O(D2O) is partially dissociated on the Si(111) surface to form the SiOH(SiOD) and SiH(SiD) species. Angle and primary-electron-energy dependences of the vibrational loss intensities were measured. Relative contributions to the vibrational excitations of the dipole, impact, and resonance mechanisms were estimated. The O–H(O–D) stretching and Si–O–H (Si–O–D) bending vibrations are partly excited by the resonance mechanism in the primary energy region of Ep (approximately-equal-to)2–7 eV. EELS spectra of the Si(111) surface exposed to H2O(D2O) at 300 K and of the same surface heated to ∼700–900 K are presented, and surface reaction mechanisms are discussed.
    Type of Medium: Electronic Resource
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