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Laser-induced interaction of ammonia with GaAs(100). II. Desorption dynamics (1992)

Zhu, X.-Y. ; Wolf, M. ; Huett, T. ; [et al.]

College Park, Md. : American Institute of Physics (AIP)

The Journal of Chemical Physics 97 (1992), S. 5868-5875

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ISSN: 1089-7690

Source: AIP Digital Archive

Topics: Physics , Chemistry and Pharmacology

Notes: UV laser irradiation of ammonia adsorbed on GaAs(100) leads to molecular desorption, with a mean translational temperature of 〈Etrans/2k(approximately-greater-than)=300 K, independent of photon energy and isotope substitution. However, the photodesorption cross section depends strongly on isotope substitution: σNH3/σND3=4.1 at hν=6.4 eV. This isotope effect is too large to be accounted for by the mass difference in the leaving particles (NH3 vs ND3), but can be successfully explained in terms of an isotope effect in the internal N–H(D) coordinates. We take this as evidence for uv-driven photodesorption from electronically quenched, but vibrationally hot ground state ammonia.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.463746

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