Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
57 (1985), S. 4817-4819
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The first experimental Raman and photoluminescence spectra are presented for the metastable alloy GaAs1−xSbx grown by organometallic vapor phase epitaxy throughout its miscibility gap extending from x=0.2 to x=0.75. The phonon peak halfwidths are found to broaden by nearly a factor of 2 over halfwidths found in the binary compounds GaAs and GaSb. Phonon line shapes become more asymmetric in the miscibility gap as the selection rules break down; in addition, a second peak appears for samples grown near the center of the miscibility gap. Line shapes are analyzed and the phonon coherence length is found to be reduced from several hundred angstroms in GaAs to approximately 60 A(ring) in samples grown in the miscibility gap. The compositional dependence of the room-temperature band-gap energy has been found to closely follow earlier predictions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.335299
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