Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
57 (1985), S. 5336-5339
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The electron velocity distribution is calculated for an idealized model of the high electron mobility transistor using a many-particle Monte Carlo model and a self-consistent two-dimensional Poisson solver. Hot electron effects, nonstationary effects, and real space transfer are analyzed. The results show that significant velocity overshoot, 2.8×107 cm/s at 300 K and 3.7×107 cm/s at 77 K exists under the gate and that the velocity overshoot is limited by both k-space transfer and real-space transfer. The values of the overshoot velocities are much smaller than those obtained from the more conventional drift-diffusion model.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.334851
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