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Atomic structure model for Ga1−xInxAs solid solution (1985)

Fukui, T.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 57 (1985), S. 5188-5191

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A simple atomic structure model was proposed for Ga1−xInxAs solid solution. Distortion energy caused by the differences in Ga-As and In-As bond lengths was calculated using the valence-force-field approach. Calculated bond lengths for Ga1−xInxAs agree well with the extended x-ray absorption fine structure data. The calculated mixing enthalpy which corresponds to the excess energy caused by distortions agree with that from phase diagram.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.335254

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