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Diffusion and electrical properties of silicon-doped gallium arsenide (1985)

Greiner, Mark E. ; Gibbons, James F.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 57 (1985), S. 5181-5187

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The amphoteric nature of silicon in gallium arsenide is used to develop diffusion and electrical compensation mechanisms. The diffusion mechanism is based on the formation and diffusion of nearest-neighbor donor-acceptor pairs. General solutions are presented that predict abrupt diffusion fronts for a wide range of pairing conditions. Experiments support the application of this mechanism to Si diffusion in GaAs at high concentrations. A compensation mechanism for amphoteric dopants is developed as well. The compensation process is driven primarily by the free-electron concentration. Nearly complete compensation is predicted for large dopant concentrations.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.335253

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