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Charge control and geometric magnetoresistance of a gated AlGaAs/GaAs heterojunction transistor (1985)

Harrang, J. P. ; Higgins, R. J. ; Goodall, R. K. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 58 (1985), S. 4431-4437

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have measured a series of low-temperature transport parameters of AlGaAs/GaAs heterojunction transistors. The techniques used provide direct measurement of the two-dimensional electron gas on the same sample in which standard device characterization tools are applied. This creates an environment for devising and testing realistic device models. The apparent charge density is measured via both Hall and capacitance-voltage measurements and is compared with the two-dimensional electron gas charge measured via Shubnikov–de Haas conductivity oscillations. From this comparison we interpret the charge control of these gated heterojunction devices. Geometric magnetoresistance, magnetotransconductance, and Hall measurements of the mobility are presented and complications arising from the layered structure of the heterojunctions are discussed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.335535

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